FDD8451 Fairchild Semiconductor, FDD8451 Datasheet - Page 4

• Manufacturer Part Number: FDD8451
• Description: MOSFET N-CH 40V 9A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD8451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 20V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.024Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 28A
• Power Dissipation: 30W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8451TR

FDD8451 Rev. B2
Typical Characteristics
Figure 11.
100
Figure 9.
0.1
100
10
10
1
Figure 7.
1
10
1
1E-3
8
6
4
2
0
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY
LIMITED BY
PACKAGE
V
DS
Forward Bias Safe Operating Area
Unclamped Inductive Switching
0.01
, DRAIN-SOURCE VOLTAGE (V)
Gate Charge Characteristics
t AV , TIME IN AVALANCHE(ms)
r
DS(on)
4
Q
T J = 150 o C
g
Capability
, GATE CHARGE(nC)
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25
T J = 25 o C
V
10
DD
8
= 15V
O
C
V
1
DD
T
T J = 125 o C
J
= 25V
= 25°C unless otherwise noted
12
V
10
DD
100ms
= 20V
100us
1ms
10ms
DC
80
100
16
4
Figure 8.
Figure 10.
10000
1000
100
Figure 12. Single
3000
1000
10
30
25
20
15
10
100
5
0
10
10
0.1
-5
R JC = 4.1
SINGLE PULSE
Capacitance vs Drain to Source Voltage
40
Maximum Continuous Drain Current vs
f = 1MHz
V
V
GS
10
GS
V
= 0V
-4
DS
= 10V
T
Case Temperature
60
, DRAIN TO SOURCE VOLTAGE (V)
C
o
t, PULSE WIDTH (s)
, CASE TEMPERATURE
C/W
10
Dissipation
80
-3
Pulse Maximum Power
1
V GS =4.5V
C
C
C
T
rss
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
10
100
iss
oss
C
I = I
= 25
-2
25
o
C
120
V GS = 10V
10
o
C DERATE PEAK
175 T
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-1
www.fairchildsemi.com
150
(
140
–
o
C
10
)
C
10
0
160
10
175
40
1