SI2302ADS-T1 Vishay, SI2302ADS-T1 Datasheet - Page 2
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SI2302ADS-T1
Manufacturer Part Number
SI2302ADS-T1
Description
MOSFET N-CH 20V 2.1A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2302ADS-T1-E3.pdf
(5 pages)
Specifications of SI2302ADS-T1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
1.2V @ 50µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
N Channel
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
85mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
950mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2302ADS-T1
Manufacturer:
WISEVIEM
Quantity:
128
Part Number:
SI2302ADS-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2302ADS-T1-E1
Manufacturer:
VISHAY
Quantity:
384
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY
Quantity:
3 105
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
45 841
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY
Quantity:
970
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si2302ADS
Vishay Siliconix
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Effective for production 10/04.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
a
a
a
A
= 25 °C, unless otherwise noted
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
GS(th)
Q
Q
C
d(on)
d(off)
GSS
DSS
g
Q
oss
t
SD
t
iss
rss
gd
fs
gs
r
f
g
V
I
V
V
D
DS
DS
DS
≅ 3.6 A, V
= 10 V, V
= 20 V, V
= 10 V, V
V
V
V
V
V
V
V
V
I
V
S
V
DS
DD
DS
DS
DS
GS
GS
DS
GS
DS
= 0.94 A, V
Test Conditions
= 0 V, V
= V
≥ 5 V, V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 20 V, V
= 0 V, I
= 5 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
= 0 V, f = 1 MHz
D
GS
GS
GS
D
D
D
D
GS
GS
L
= 10 µA
= 3.6 A
= 50 µA
= 4.5 V
= 2.5 V
= 3.6 A
= 3.1 A
= 2.8 Ω
= ± 8 V
= 0 V
= 0 V
J
D
= 55 °C
g
= 3.6 A
= 6 Ω
Min.
0.65
20
6
4
0.045
0.070
Typ.
0.95
0.76
0.65
300
120
4.0
1.5
80
55
16
10
8
7
S10-0047-Rev. I, 11-Jan-10
Document Number: 71831
0.060
± 100
0.115
Max.
1.2
0.1
2.0
1.2
10
15
80
60
25
b
Unit
nA
µA
nC
pF
ns
V
A
Ω
S
V