SI2302ADS-T1 Vishay, SI2302ADS-T1 Datasheet - Page 3
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SI2302ADS-T1
Manufacturer Part Number
SI2302ADS-T1
Description
MOSFET N-CH 20V 2.1A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2302ADS-T1-E3.pdf
(5 pages)
Specifications of SI2302ADS-T1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
1.2V @ 50µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
N Channel
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
85mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
950mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2302ADS-T1
Manufacturer:
WISEVIEM
Quantity:
128
Part Number:
SI2302ADS-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2302ADS-T1-E1
Manufacturer:
VISHAY
Quantity:
384
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY
Quantity:
3 105
Company:
Part Number:
SI2302ADS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
45 841
Part Number:
SI2302ADS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY
Quantity:
970
Part Number:
SI2302ADS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS T
Document Number: 71831
S10-0047-Rev. I, 11-Jan-10
0.15
0.12
0.09
0.06
0.03
0.00
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.6 A
On-Resistance vs. Drain Current
= 10 V
1
1
2
V
V
DS
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 5 V thru 2.5 V
I
D
V
Gate Charge
- Drain Current (A)
GS
2
2
4
= 2.5 V
0 V, 0.5 V, 1 V
3
3
6
A
2 V
= 25 °C, unless otherwise noted
V
GS
4
4
8
= 4.5 V
1.5 V
10
5
5
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 3.6 A
rss
0.5
= 4.5 V
4
V
V
GS
T
Transfer Characteristics
DS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25 °C
T
Capacitance
1.0
C
8
= 125 °C
C
iss
50
Vishay Siliconix
Si2302ADS
1.5
12
- 55 °C
www.vishay.com
100
2.0
16
2.5
150
20
3