FDD5353 Fairchild Semiconductor, FDD5353 Datasheet
FDD5353
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FDD5353 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD5353 FDD5353 ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C ® MOSFET General Description = 10.7A This N-Channel D Semiconductor‘s advanced Power Trench = 9.5A D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...
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... R is determined by the user’s board design. θJC θJA 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ° 3: Starting 3mH 13A ©2008 Fairchild Semiconductor Corporation FDD5353 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to 25° ...
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... Figure 3. Normalized On- Resistance vs Junction Temperature 100 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDD5353 Rev 25°C unless otherwise noted J 3.0 = 10V 2.5 2 3.5V GS 1.5 µ 100 125 150 ...
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... Switching Capability 200 100 10 THIS AREA IS LIMITED BY r DS(on) 1 SINGLE PULSE T = MAX RATED 1.8 θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDD5353 Rev 25°C unless otherwise noted J 10000 = 20V DD 1000 V = 30V DD = 40V ...
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... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 - ©2008 Fairchild Semiconductor Corporation FDD5353 Rev 25°C unless otherwise noted 1.8 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve SINGLE PULSE C/W θ Note 1b ...
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... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDD5353 Rev.C FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...