FDD6N50TM Fairchild Semiconductor, FDD6N50TM Datasheet - Page 4

• Manufacturer Part Number: FDD6N50TM
• Description: MOSFET N-CH 500V 6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N50TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD6N50/FDU6N50 REV. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
1.2
1.1
1.0
0.9
0.8
2
1
0
10
-100
0
Operation in This Area
is Limited by R
∝
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
C
DS(on)
vs. Temperature
V
T
DS
J
, Junction Temperature [
10
, Drain-Source Voltage [V]
0
1
1 0
1 0
1 0
-1
-2
0
1 0
50
-5
Figure 11. Transient Thermal Response Curve
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
DC
100
10
10 ms
2
o
C]
1 0
s in g le p u ls e
1 ms
♦
-4
1. V
2. I
Notes :
t
D
100 us
1
GS
= 250
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
150
= 0 V
10 us
µ
A
1 0
-3
200
10
(Continued)
3
4
1 0
-2
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-100
∝
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
N o te s :
-1
ヨ J C
JM
P
(t) = 1 .4 ∩ /W M a x.
- T
DM
-50
50
C
vs. Case Temperature
= P
D M
1 0
t
T
T
1
vs. Temperature
* Z
t
0
J
C
2
, Junction Temperature [
, Case Temperature [∩ ]
1
/t
ヨ J C
0
2
(t)
75
1 0
50
1
100
100
o
C]
125
♦
1. V
2. I
150
Notes :
www.fairchildsemi.com
D
GS
= 3 A
= 10 V
200
150