FDD6N50TM Fairchild Semiconductor, FDD6N50TM Datasheet - Page 6

• Manufacturer Part Number: FDD6N50TM
• Description: MOSFET N-CH 500V 6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N50TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.76 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FDD6N50/FDU6N50 REV. A