FQD18N20V2TM Fairchild Semiconductor, FQD18N20V2TM Datasheet - Page 4

• Manufacturer Part Number: FQD18N20V2TM
• Description: MOSFET N-CH 200V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQD18N20V2TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Fall Time: 62 ns
• Rise Time: 133 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area
-1
Figure 7. Breakdown Voltage Variation
2
1
0
10
-100
0
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
-50
o
C
o
C
V
T
DS
J
vs. Temperature
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
1 0
1 0
Operation in This Area
is Limited by R
1 0
1
- 1
- 2
1 0
0
- 5
50
0 . 0 2
0 . 0 5
0 . 0 1
D = 0 . 5
0 . 2
0 . 1
DC
DS(on)
10 ms
Figure 11. Transient Thermal Response Curve
s i n g l e p u l s e
1 ms
100
1 0
(Continued)
100 us
10
o
- 4
t
C]
1
※ Notes :
2
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
150
= 250 μ A
= 0 V
1 0
200
- 3
1 0
- 2
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
0
-100
25
Figure 10. Maximum Drain Current
※
1 0
Figure 8. On-Resistance Variation
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
N o t e s :
P
- 1
DM
θ
J M
-50
vs. Case Temperature
J C
50
- T
( t ) = 1 . 5 ℃ / W M a x .
C
T
T
J
= P
, Junction Temperature [
t
C
vs. Temperature
1
, Case Temperature [ ℃ ]
t
2
1 0
0
D M
0
75
* Z
1
/ t
θ
2
J C
50
( t )
100
1 0
1
100
o
C]
125
※ Notes :
150
1. V
2. I
D
GS
= 7.5 A
= 10 V
Rev. B2, January 2009
150
200