FDB8880 Fairchild Semiconductor, FDB8880 Datasheet - Page 3

• Manufacturer Part Number: FDB8880
• Description: MOSFET N-CH 30V 54A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0116 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 54A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A1
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse width = 100s.
3
C
C
C
R
Q
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
ON
d(ON)
r
d(OFF)
f
OFF
rr
ISS
OSS
RSS
G
SD
g(TOT)
g(5)
g(TH)
gs
gs2
gd
RR
J
= 25°C, L = 34uH, I
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
= 43A,Vdd = 27V, Vgs = 10V.
(V
GS
= 10V)
V
I
V
f = 1MHz
V
V
V
V
V
I
I
I
SD
SD
SD
SD
GS
GS
GS
GS
DS
DD
GS
= 40A
= 3.5A
= 40A, dI
= 40A, dI
= 0.5V, f = 1MHz
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 15V, V
= 15V, I
= 10V, R
3
D
SD
SD
GS
GS
= 40A
/dt = 100A/ s
/dt = 100A/ s
= 0V,
= 13.6
V
I
I
D
g
DD
= 1.0mA
= 40A
= 15V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1240
255
147
107
2.7
1.6
3.2
2.0
4.8
22
12
47
51
8
-
-
-
-
-
-
www.fairchildsemicom
1.25
171
147
2.1
1.0
29
16
27
18
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V