FDB8880 Fairchild Semiconductor, FDB8880 Datasheet - Page 8

• Manufacturer Part Number: FDB8880
• Description: MOSFET N-CH 30V 54A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1240pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0116 Ohms @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 54 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 54A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 9.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A1
PSPICE Electrical Model
.SUBCKT FDP8880 2 1 3 ; rev October 2004
Ca 12 8 9.5e-10
Cb 15 14 9.5e-10
Cin 6 8 1.15e-9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 32.88
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.3e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 1.7e-9
RLgate 1 9 53
RLdrain 2 5 10
RLsource 3 7 17
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 1.0e-3
Rgate 9 20 2.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 6.8e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}
.MODEL DbodyMOD D (IS=3E-12 IKF=10 N=1.01 RS=5e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=4.8e-10 M=0.55 TT=1e-11 XTI=2)
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.8e-6)
.MODEL DplcapMOD D (CJO=5.5e-10 IS=1e-30 N=10 M=0.45)
.MODEL MstroMOD NMOS (VTO=2.10 KP=170 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MmedMOD NMOS (VTO=1.75 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2)
.MODEL MweakMOD NMOS (VTO=1.39 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.0e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=-12e-3 TC2=.35e-4)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)
.MODEL RvtempMOD RES (TC1=-2.78e-3 TC2=1.5e-6)
.MODEL RvthresMOD RES (TC1=-1e-3 TC2=-8.2e-6)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.3 VOFF=-0.8)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=-1.3)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
8
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
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LDRAIN
SOURCE
DRAIN
2
3