SI7121DN-T1-GE3 Vishay, SI7121DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7121DN-T1-GE3
• Description: MOSFET P-CH 30V 16A 1212-8
• Manufacturer: Vishay

Specifications of SI7121DN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 15V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 25V
• Voltage Vgs Max: -3V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7121DN-T1-GE3TR

Si7121DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
0.01
100
0.8
0.6
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
75
0.01
100
0.1
0.8
= 5 mA
10
1
0.01
T
100
J
Limited by R
* V
= 25 °C
I
D
GS
1.0
= 250 µA
125
> minimum V
V
Single Pulse
New Product
DS
0.1
T
A
DS(on)
150
- Drain-to-Source Voltage (V)
1.2
Safe Operating Area
= 25 °C
*
GS
at which R
1
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
10
50
40
30
20
10
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
I
D
Single Pulse Power, Junction-to-Ambient
= 10 A
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
100
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-81466-Rev. C, 23-Jun-08
Document Number: 69956
10
6
T
T
J
J
100
= 125 °C
= 25 °C
8
1000
10