SI7121DN-T1-GE3 Vishay, SI7121DN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7121DN-T1-GE3
• Description: MOSFET P-CH 30V 16A 1212-8
• Manufacturer: Vishay

Specifications of SI7121DN-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1960pF @ 15V
• Power - Max: 52W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 25V
• Voltage Vgs Max: -3V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: -3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7121DN-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
65
52
39
26
13
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
45
36
27
18
9
0
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
T
150
C
Package Limited
Current Derating*
50
- Case Temperature (°C)
75
100
2.0
1.6
1.2
0.8
0.4
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
100
Si7121DN
www.vishay.com
125
150
5