SI2323DS-T1 Vishay, SI2323DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2323DS-T1
• Description: MOSFET P-CH 20V SOT23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2323DS-T1

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 10V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 72024
S-22121—Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0
0
0
V
GS
V
I
D
DS
On-Resistance vs. Drain Current
= 4.7 A
= 1.8 V
= 6 V
1
V
4
3
DS
Q
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
I
GS
D
- Total Gate Charge (nC)
- Drain Current (A)
= 5 thru 2.5 V
Gate Charge
2
8
6
12
3
9
V
V
GS
GS
= 2.5 V
= 4.5 V
16
12
4
2 V
1.5 V
1 V
20
15
5
New Product
1800
1500
1200
900
600
300
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
16
12
8
4
0
0
-50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
-25
V
I
D
GS
= 4.7 A
0.5
V
V
= 4.5 V
4
DS
GS
T
Transfer Characteristics
J
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Capacitance
25
C
1.0
oss
8
50
Vishay Siliconix
T
25_C
1.5
12
C
75
= -55_C
C
iss
Si2323DS
100
2.0
16
125_C
www.vishay.com
125
150
2.5
20
3