IRFR9310TRLPBF Vishay, IRFR9310TRLPBF Datasheet
![MOSFET P-CH 400V 1.8A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9310TRLPBF
Specifications of IRFR9310TRLPBF
Available stocks
Related parts for IRFR9310TRLPBF
IRFR9310TRLPBF Summary of contents
Page 1
... The straight lead version (IRFU/SiHFU series) is for through-hole P-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. DPAK (TO-252) DPAK (TO-252) SiHFR9310TRL-GE3 SiHFR9310TR-GE3 a IRFR9310TRLPbF IRFR9310TRPbF a SiHFR9310TL-E3 SiHFR9310T-E3 a IRFR9310TRL IRFR9310TR a SiHFR9310TL SiHFR9310T = 25 ° ...
Page 2
... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Fig Typical Output Characteristics Document Number: 91284 S10-1139-Rev. C, 17-May-10 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 10 1 ° 0.1 100 2.5 2.0 1.5 1.0 0.5 ° 0.0 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° ° 150 -50V DS 20μs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig ...
Page 4
... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix 500 1MHz iss rss 400 oss iss 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage -1. =-320V DS V =-200V =-80V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91284 S10-1139-Rev. C, 17-May-10 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 125 150 ° 0.001 0. Rectangular Pulse Duration (sec) 1 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
Page 6
... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver 15 V 300 TOP 250 BOTTOM 200 150 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
Page 7
... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91284. Document Number: 91284 S10-1139-Rev ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...