IRFD9020PBF Vishay, IRFD9020PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD9020PBF
• Description: MOSFET P-CH 60V 1.6A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9020PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 1µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Gate Charge Qg: 19 nC
• Forward Transconductance Gfs (max / Min): 1.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.6A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.28Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9020PBF

IRFD9020, SiHFD9020
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
R
t
t
I
C
V
I
C
C
Q
V
GS(th)
DS(on)
Q
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
thJA
SM
I
t
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
D
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
GS
GS
R
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
J
Reference to 25 °C, I
g
= 25 °C, I
= - 10 V
= - 10 V
= 18 , R
= - 48 V, V
V
V
DS
V
TYP.
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
V
DD
GS
DS
-
DS
= - 25 V, I
= - 30 V, I
F
= 0 V, I
= - 60 V, V
= V
V
= - 11A, di/dt = 100 A/μs
V
S
V
DS
D
GS
GS
= - 1.6 A, V
GS
GS
I
= 2.5, see fig. 10
D
= - 25 V
= 20
, I
= - 11 A, V
D
= 0 V
= 0 V, T
see fig. 6 and 13
D
D
= - 250 μA
D
= - 0.96 A
I
= - 1 μA
GS
D
= - 11 A
= - 0.96 A
D
= 0 V
= - 1 mA
J
GS
G
G
= 150 °C
DS
= 0 V
= - 48 V,
b
D
S
MAX.
b
D
S
120
b
b
b
b
MIN.
- 2.0
- 60
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2466-Rev. C, 25-Oct-10
Document Number: 90170
- 0.056
TYP.
0.32
570
360
100
4.0
6.0
65
13
68
15
29
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
100
- 100
- 500
- 4.0
- 1.6
- 6.3
0.28
0.64
- 13
200
5.4
S
19
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V