IRFD9020PBF Vishay, IRFD9020PBF Datasheet - Page 5

• Manufacturer Part Number: IRFD9020PBF
• Description: MOSFET P-CH 60V 1.6A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9020PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 960mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 4V @ 1µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Gate Charge Qg: 19 nC
• Forward Transconductance Gfs (max / Min): 1.3 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.6A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.28Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9020PBF

Document Number: 90170
S10-2466-Rev. C, 25-Oct-10
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
T
A
, Ambient Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
t
1
, Rectangular Pulse Duration (s)
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
IRFD9020, SiHFD9020
V
GS
t
d(on)
V
DS
t
r
D.U.T.
R
Vishay Siliconix
D
t
d(off)
t
f
+
-
www.vishay.com
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DD
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