FDB12N50TM Fairchild Semiconductor, FDB12N50TM Datasheet - Page 2

• Manufacturer Part Number: FDB12N50TM
• Description: MOSFET N-CH 500V 11.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB12N50TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 165W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 165000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB12N50TMTR

FDB12N50TM Rev. A1
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
SD
Device Marking
DSS
Symbol
ΔT
≤ 11.5A, di/dt ≤ 200A/μs, V
DSS
FDB12N50
FDI12N50
J
AS
= 11.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDB12N50TM
FDI12N50TU
G
Device
DSS
= 25Ω, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
D
I
2
2
-PAK
-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 25V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
330mm
D
= 6A
= 11.5A
= 11.5A
GS
C
= 6A
DS
= 250μA
= 11.5A
= 11.5A
= 125
= 0V
= 0V, T
o
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
24mm
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.66
0.55
370
985
140
3.8
25
60
45
35
12
22
10
11
6
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1315
0.65
130
105
11.5
190
1.4
5.0
60
85
10
17
30
46
800
1
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
nA
ns
ns
ns
ns
ns
μC
V
Ω
A
A
V
V
S
o
C