FDB12N50TM Fairchild Semiconductor, FDB12N50TM Datasheet - Page 4

• Manufacturer Part Number: FDB12N50TM
• Description: MOSFET N-CH 500V 11.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB12N50TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 165W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 165000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB12N50TMTR

FDB12N50TM Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
100
1.2
1.1
1.0
0.9
0.8
0.1
10
-100
1
1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
1E-3
0.01
0
0.1
DS(on)
10
5
1
10
*Notes:
0.02
Single pulse
-5
0.05
0.01
0.5
0.1
0.2
1. T
2. T
3. Single Pulse
50
C
J
= 150
= 25
o
100
o
C
10
C
100
DC
10ms
Figure 11. Transient Thermal Response Curve
-4
*Notes:
[
1. V
2. I
o
1ms
C
D
150
GS
]
100
= 250
= 0V
μ
s
Rectangular Pulse Duration [sec]
20
μ
10
A
μ
200
s
-3
800
(Continued)
10
-2
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
14
12
10
Figure 10. Maximum Drain Current
8
6
4
2
0
-100
25
10
*Notes:
P
-1
1. Z
2. Duty Factor, D=t
3. T
DM
θ
JM
JC
-50
(t) = 0.75
- T
50
T
T
J
C
C
vs. Temperature
, Junction Temperature
t
, Case Temperature
1
vs. Case Temperature
= P
t
10
2
DM
0
0
o
C/W Max.
* Z
75
1
/t
θ
2
JC
(t)
50
10
100
1
100
[
o
C
*Notes:
[
]
1. V
2. I
o
125
C
D
150
]
GS
= 6A
= 10V
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150
200