NDB6030PL Fairchild Semiconductor, NDB6030PL Datasheet - Page 3

MOSFET P-CH 30V 30A D2PAK

NDB6030PL

Manufacturer Part Number
NDB6030PL
Description
MOSFET P-CH 30V 30A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDB6030PL

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 5V
Input Capacitance (ciss) @ Vds
1570pF @ 15V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.037 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
- 30 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDB6030PL
Manufacturer:
SEMIKRON
Quantity:
200
Part Number:
NDB6030PL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics
30
25
20
15
10
60
40
20
5
0
0
0
1.8
1.6
1.4
1.2
0.8
0.6
1
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
1
-50
V
DS
V
V
= -5V
GS
I = -15A
D
GS
-25
= -10V
= -4.5V
1
with Temperature.
-V
-V
GS
2
DS
0
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
-7.0
, DRAIN-SOURCE VOLTAGE (V)
25
-6.0
2
-5.0
T = -55°C
A
50
3
-4.5
75
3
-4.0
100
125°C
4
25°C
-3.5
4
125
-3.0
150
5
5
175
0.12
0.08
0.06
0.04
0.02
0.1
0.0001
1.6
1.4
1.2
0.8
0.6
0.4
0
1
0.01
2
0.1
0
60
10
Figure 2. On-Resistance Variation
Figure 4. On Resistance Variation with
1
Figure 6. Body Diode Forward Voltage
with Drain Current and Gate Voltage.
T = 25°C
0.2
A
V
Variation with Source Current and
V
GS
GS
= -3.5 V
= 0V
10
-V
0.4
125 °C
-V
SD
Gate-To- Source Voltage.
T = 125°C
GS
4
J
, BODY DIODE FORWARD VOLTAGE (V)
,GATE TO SOURCE VOLTAGE (V)
20
-I , DRAIN CURRENT (A)
-4.0
0.6
D
25°C
-4.5
0.8
30
6
Temperature.
-55°C
-5.0
-5.5
1
40
-6.0
8
1.2
NDP6030PL Rev.B1
I
50
D
-7.0
= -15A
-10
1.4
60
10

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