NDB6030PL Fairchild Semiconductor, NDB6030PL Datasheet - Page 4

• Manufacturer Part Number: NDB6030PL
• Description: MOSFET P-CH 30V 30A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of NDB6030PL

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.037 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: - 30 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
10
150
100
8
6
4
2
0
50
30
10
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate Charge Characteristics.
5
2
1
0
1
I
0.05
0.03
0.02
0.01
D
0.5
0.3
0.2
0.1
1
= -30A
0.01
R
SINGLE PULSE
V
JC
T
GS
C
10
2
= 2.0 °C/W
= 25°C
= -4.5V
- V
0.05
0.02
0.1
0.01
Single Pulse
0.2
DS
D = 0.5
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
20
0.05
5
Figure 11. Transient Thermal Response Curve.
0.1
10
30
V
DS
= -6V
-12V
20
40
-24V
0.5
30
(continued)
1
50
50
t ,TIME (ms)
1
7000
6000
5000
4000
3000
2000
1000
5
5000
3000
2000
1000
500
300
150
0.001
0
0.1
Figure 8.Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
10
f = 1 MHz
V
GS
0.01
= 0 V
0.3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
SINGLE PULSE TIME (mS)
0.1
50
1
P(pk)
T - T
R
1
Duty Cycle, D = t /t
J
2
100
R
JC
t
1
C
JC
(t) = r(t) * R
t
= P * R
2
= 2.0 °C/W
10
5
SINGLE PULSE
R
T = 25°C
JC
JC
C
1
NDP6030PL Rev.B1
10
=2° C/W
JC
100
(t)
2
C oss
C iss
C rss
500
20 30
1,000
1000