IRF9Z14SPBF Vishay, IRF9Z14SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9Z14SPBF
• Description: MOSFET P-CH 60V 6.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z14SPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z14SPBF

Document Number: 91089
S10-1728-Rev. B, 02-Aug-10
Vary t
required I
91089_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
7.5
6.0
4.5
3.0
1.5
0.0
AS
91089_11
25
R
- 10 V
g
10
0.1
10
V
-2
50
1
DS
10
T
C
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
t
, Case Temperature (°C)
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
100
0.01 Ω
L
10
-4
125
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Single Pulse
(Thermal Response)
150
+
-
10
175
V
t
1
-3
DD
, Rectangular Pulse Duration (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
0.1
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
V
DS
Notes:
1. Duty Factor, D = t
2. Peak T
t
r
t
p
1
j
D.U.T.
= P
P
DM
R
DM
Vishay Siliconix
D
t
x Z
d(off)
V
t
1
1
DS
thJC
/t
2
t
t
f
+ T
2
+
-
www.vishay.com
C
V
V
10
DD
DD
5