IRF9Z14SPBF Vishay, IRF9Z14SPBF Datasheet
IRF9Z14SPBF
Specifications of IRF9Z14SPBF
Related parts for IRF9Z14SPBF
IRF9Z14SPBF Summary of contents
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... D 2 typical surface mount application. P-Channel MOSFET The through-hole version (IRF9Z14L, SiHF9Z14L) is available for low-profile applications PAK (TO-263) D PAK (TO-263) SiHF9Z14S-GE3 SiHF9Z14STRL-GE3 IRF9Z14SPbF IRF9Z14STRLPbF SiHF9Z14S-E3 SiHF9Z14STL-E3 IRF9Z14S IRF9Z14STRL SiHF9Z14S SiHF9Z14STL = 25 °C, unless otherwise noted ° ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Pulse Width - Drain-to-Source Voltage ( 91089_02 Fig Typical Output Characteristics Document Number: 91089 S10-1728-Rev. B, 02-Aug-10 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L - 4 ° 91089_03 - 4 175 ° 91089_04 Vishay Siliconix 1 10 ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 6.7 A ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix 600 MHz iss rss gd 480 oss ds 360 240 120 Drain-to-Source Voltage ( 91089_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 Total Gate Charge (nC) 91089_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91089_07 For test circuit ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91089 S10-1728-Rev. B, 02-Aug-10 IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 500 Top 400 Bottom 300 200 100 125 100 Starting T , Junction Temperature (°C) 91089_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 2 4 6.7 A 150 175 Current regulator Same type as D.U.T. 50 kΩ ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91089. Document Number: 91089 S10-1728-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...