SI7120DN-T1-E3 Vishay, SI7120DN-T1-E3 Datasheet

MOSFET N-CH 60V 6.3A 1212-8

SI7120DN-T1-E3

Manufacturer Part Number
SI7120DN-T1-E3
Description
MOSFET N-CH 60V 6.3A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7120DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.3A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.3 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
10A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7120DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7120DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72771
S-80581-Rev. E, 17-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: Si7120DN-T1-E3 (Lead (Pb)-free)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
60
8
(V)
3.30 mm
D
7
D
6
PowerPAK 1212-8
D
5
Bottom View
http://www.vishay.com/ppg?73257
0.028 at V
Si7120DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.019 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
a
GS
GS
2
(Ω)
S
= 4.5 V
= 10 V
N-Channel 60-V (D-S) MOSFET
3
S
a
3.30 mm
4
G
a
b, c
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
A
I
= 25 °C, unless otherwise noted
D
8.2
10
Steady State
Steady State
(A)
L = 0 1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance
• PowerPAK
• 100 % R
• Primary Side Switch
• Synchronous Rectification
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
®
1212-8 Package with Low 1.07 mm Profile
Power MOSFET
Typical
10 s
8.0
3.2
3.8
2.4
1.9
10
26
65
G
N-Channel MOSFET
- 55 to 150
± 20
260
60
40
22
24
Steady State
D
S
Maximum
6.3
5.1
1.3
1.5
1.0
2.4
33
81
Vishay Siliconix
Si7120DN
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SI7120DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7120DN-T1-E3 (Lead (Pb)-free) Si7120DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7120DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72771 S-80581-Rev. E, 17-Mar-08 3000 2500 2000 1500 1000 °C J 0.8 1.0 1.2 Si7120DN Vishay Siliconix C iss C oss C 500 rss Drain-to-Source Voltage (V) DS Capacitance 2 1 1.6 1.4 1.2 1.0 0.8 ...

Page 4

... Si7120DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72771. Document Number: 72771 S-80581-Rev. E, 17-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7120DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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