FDD2670 Fairchild Semiconductor, FDD2670 Datasheet - Page 2

• Manufacturer Part Number: FDD2670
• Description: MOSFET N-CH 200V 3.6A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1228pF @ 100V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. I
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
f
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
S
SD
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
DSS
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
3A, di/dt
DSS
J
J
100A/ s, V
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) R
DD
mounted on a 1in 2 pad of
2oz copper.
JA
Parameter
BV
= 40 o C/W when
DSS
, Starting T
(Note 2)
(Note 2)
J
= 25 C
CA
is determined by the user's board design.
(Note 1)
T
V
V
I
V
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
= 25°C unless otherwise noted
DD
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 160 V,
= V
= 5 V,
= 100 V,
= 100 V,
= 100 V,
= 0 V, I
= 20 V,
= –20 V,
= 10 V,
= 10 V, I
= 10 V,
= 100 V,
= 10 V,
= 10 V
= 0 V,
Test Conditions
GS
, I
D
D
D
I
= 250 A
= 250 A
S
= 3.6 A T
= 2.1 A
I
V
V
D
V
I
V
I
GS
DS
D
V
I
I
R
D
DS
= 3.6 A
D
D
b) R
minimum mounting pad.
GS
DS
= 3.6 A
GEN
= 3.6 A,
= 0 V
= 0 V
= 3.6 A
= 1 A,
= 0 V
= 0 V,
= 5 V
JA
= 6
J
= 96 o C/W on a
= 125 C
(Note 2)
Min
200
20
2
Typ Max Units
1228
214
100
205
112
-10
0.7
15
17
13
30
25
27
10
4
8
7
–100
375
100
130
275
3.6
4.5
2.1
1.2
23
16
48
40
43
1
FDD2670 Rev C1(W)
mV/ C
mV/ C
m
NA
mJ
NA
PF
PF
nC
nC
nC
pF
ns
ns
ns
ns
A
V
V
A
S
A
V
A