FDD2670 Fairchild Semiconductor, FDD2670 Datasheet - Page 4

• Manufacturer Part Number: FDD2670
• Description: MOSFET N-CH 200V 3.6A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1228pF @ 100V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
15
12
0.001
9
6
3
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
0.01
0.1
I
D
R
SINGLE PULSE
R
1
= 3.6 A
DS(ON)
0.001
V
T
JA
5
GS
A
= 96
= 25
LIMIT
= 10V
o
o
C/W
C
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
1
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
15
, GATE CHARGE (nC)
SINGLE PULSE
0.01
DC
20
10
10s
Figure 11. Transient Thermal Response Curve.
1s
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
100ms
V
25
DS
= 40V
10ms
30
100
100 s
100 V
0.1
35
70
V
1000
40
t
1
, TIME (sec)
2000
1500
1000
100
1
500
80
60
40
20
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
ISS
C
OSS
0.1
20
V
Power Dissipation.
C
DS
RSS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
40
t
1
, TIME (sec)
10
60
P(pk)
100
SINGLE PULSE
Duty Cycle, D = t
R
T
R
J
JA
T
R
A
JA
- T
= 96°C/W
= 25°C
(t) = r(t) + R
JA
100
A
t
1
80
= 96°C/W
= P * R
t
FDD2670 Rev C1(W)
2
V
f = 1MHz
GS
= 0 V
JA
1
1000
(t)
JA
/ t
100
2
1000