SFF9250L Fairchild Semiconductor, SFF9250L Datasheet - Page 2

• Manufacturer Part Number: SFF9250L
• Description: MOSFET P-CH 200V 12.6A TO-3PF
• Manufacturer: Fairchild Semiconductor

Specifications of SFF9250L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6.3A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 5V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-3PF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFF9250L
ΔBV/ΔT
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=3.9mH, I
③ I
④ Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
R
BV
V
t
t
V
I
I
C
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
SD
t
S
rr
SD
oss
DSS
rss
iss
gd
fs
r
f
gs
rr
g
≤-19.5A, di/dt≤500A/μs, V
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(Miller) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-19.5A, V
Characteristic
Characteristic
DD
=-50V, R
DD
≤BV
G
=27 , Starting T
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
①
④
Min.
--
--
--
--
--
Min.
-200
-1.0
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25℃
J
=25℃
Typ.
260
2.8
--
--
--
2500
Typ.
-0.17
.175
400
210
150
100
13
20
65
90
12
54
--
--
--
--
--
--
-12.6
-50.4
Max. Units
-1.5
--
--
Max. Units
-100
3250
-2.0
100
100
0.23
520
270
310
210
140
120
10
50
--
--
--
--
--
μC
ns
A
V
V/ C
μA
nA
nC
pF
ns
S
V
V
Integral reverse pn-diode
in the MOSFET
T
T
di
J
J
F
=25 C,I
=25 C,I
/dt=100A/μs
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
D
D
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=-250μA
=-12.6A
=6.2
=-5V,I
=-200V
=-160V,T
=-40V,I
=-160V,V
=0V,I
=-20V
=20V
=-5V,I
=0V,V
=-100V,I
Test Condition
Test Condition
See Fig 13
S
F
See Fig 5
=-19.5A,V
=-12.6A,V
POWER MOSFET
D
D
D
DS
=-250μA
=-250μA
=-6.3A
D
P-CHANNEL
=-6.3A
=-25V,f =1MHz
D
C
GS
=-12.6A,
See Fig 7
=125 C
=-5V,
DD
GS
=-160V
④
=0V
④ ⑤
④ ⑤
④
④