SFF9250L Fairchild Semiconductor, SFF9250L Datasheet - Page 3

• Manufacturer Part Number: SFF9250L
• Description: MOSFET P-CH 200V 12.6A TO-3PF
• Manufacturer: Fairchild Semiconductor

Specifications of SFF9250L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6.3A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 5V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-3PF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

POWER MOSFET
12000
10500
9000
7500
6000
4500
3000
1500
0.8
0.6
0.4
0.2
0.0
10
10
P-CHANNEL
0
1
0
10
10
0
Fig 5. Capacitance vs. Drain-Source Voltage
-1
-1
Top :
Bottom : -3.0 V
Fig 3. On-Resistance vs. Drain Current
-10.0 V
-8.0 V
-6.0 V
-5.0 V
-4.5 V
-4.0 V
-3.5 V
V
GS
20
Fig 1. Output Characteristics
-V
-V
DS
DS
V
-I
, Drain-Source Voltage [V]
GS
, Drain-Source Voltage [V]
D
10
= - 10V
10
, Drain Current [A]
40
0
0
C
C
V
C
rss
GS
oss
iss
= - 5V
60
C
C
C
iss
oss
rss
※ Note :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
10
ds
1
C
+ C
+ C
1
= 25℃
80
※ Note ;
gd
gd
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
100
10
10
10
10
10
10
-1
-1
6
4
2
0
1
0
1
0
0
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
25 ℃
150 ℃
0.6
2
150 ℃
Fig 2. Transfer Characteristics
20
25 ℃
1.2
-V
-V
-55 ℃
Q
GS
SD
G
4
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
40
V
1.8
DS
= -160V
V
DS
= -100V
SFF9250L
= -40V
6
2.4
60
※ Note
※ Note :
※ Note : I
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
3.0
DS
GS
8
= -40V
= 0V
80
D
= -19.5 A
3.6
100
10