FQP13N50 Fairchild Semiconductor, FQP13N50 Datasheet - Page 4

MOSFET N-CH 500V 12.5A TO-220

FQP13N50

Manufacturer Part Number
FQP13N50
Description
MOSFET N-CH 500V 12.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP13N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 6.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12.5 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
-100
15
12
-1
9
6
3
0
2
1
0
10
Figure 7. Breakdown Voltage Variation
25
0
Figure 10. Maximum Drain Current
-50
50
vs. Case Temperature
T
V
vs. Temperature
J
DS
T
, Junction Temperature [
Operation in This Area
is Limited by R
for FQP13N50
10
C
0
, Drain-Source Voltage [V]
, Case Temperature [ ℃ ]
※ Notes :
1
1. T
2. T
3. Single Pulse
75
C
J
= 150
= 25
DS(on)
o
C
50
o
C
DC
100
10 ms
100
10
(Continued)
1 ms
2
o
C]
※ Notes :
100 s
1. V
2. I
D
125
G S
= 250 μ A
= 0 V
150
10 s
150
200
10
3
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
-100
-1
-2
2
1
0
10
Figure 9-2. Maximum Safe Operating Area
0
Figure 8. On-Resistance Variation
-50
V
Operation in This Area
is Limited by R
T
DS
vs. Temperature
J
10
, Junction Temperature [
, Drain-Source Voltage [V]
for FQPF13N50
0
1
※ Notes :
1. T
2. T
3. Single Pulse
C
J
DS(on)
= 25
= 150
o
50
C
o
DC
C
100 ms
10 ms
10
100
2
o
1 ms
C]
100 s
※ Notes :
1. V
2. I
10 s
150
D
GS
= 6.7 A
= 10 V
Rev. B, September 2002
10
200
3

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