FQP13N50 Fairchild Semiconductor, FQP13N50 Datasheet - Page 5

• Manufacturer Part Number: FQP13N50
• Description: MOSFET N-CH 500V 12.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP13N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
- 1
- 2
0
1 0
1 0
0
- 5
- 5
0 .0 5
D = 0 .5
0 .0 2
0 .0 1
0 .0 2
0 .0 5
D = 0 .5
0 .0 1
0 .2
0 .1
0 .1
0 .2
Figure 11-1. Transient Thermal Response Curve
Figure 11. Transient Thermal Response Curve
1 0
1 0
(Continued)
- 4
- 4
s i n g le p u ls e
s i n g l e p u ls e
t
t
1
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
- 3
- 3
for FQPF13N50
for FQP13N50
1 0
1 0
- 2
- 2
※ N o te s :
※ N o te s :
1 0
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
- 1
P
P
DM
θ
J M
DM
θ J C
J M
J C
- T
- T
( t) = 2 .2 3 ℃ /W M a x .
( t) = 0 .7 4 ℃ / W M a x .
C
C
= P
= P
t
t
1
1
D M
D M
t
1 0
t
1 0
2
2
* Z
* Z
0
0
1
1
θ J C
/t
/t
θ J C
2
2
( t)
( t)
1 0
1 0
1
1
Rev. B, September 2002