IRF830ALPBF Vishay, IRF830ALPBF Datasheet - Page 10

• Manufacturer Part Number: IRF830ALPBF
• Description: MOSFET N-CH 500V 5A TO262-3
• Manufacturer: Vishay

Specifications of IRF830ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ALPBF

Document Number: 91062
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
IRF830AS/LPbF
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Notes:
D
For recommended footprint and soldering techniques refer to application note #AN-994.
Repetitive rating; pulse width limited by
I
max. junction temperature. ( See fig. 11 )
R
T
2
Starting T
SD
J
G
Pak Tape & Reel Information
≤ 150°C
≤ 5.0A, di/dt ≤ 370A/µs, V
= 25Ω, I
J
= 25°C, L = 18mH
AS
= 5.0A. (See Figure 12)
F E E D D IR E C TI O N
F E E D D I R E C T IO N
N O T ES :
1. C O M F O R M S T O EIA- 418 .
2. C O N T R O L LIN G D IM E N SIO N : M ILL IM E T ER .
3. D IM EN S IO N M E A SU R E D @ HU B .
4. IN C L U D ES F LA N G E D IST O R T IO N @ O U TE R ED G E.
T R R
T R L
DD
33 0.0 0
(14 .17 3)
M A X .
≤ V
1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
(BR)DSS
1 0.9 0 (.42 9 )
1 0.7 0 (.42 1 )
13 .5 0 (.5 32 )
12 .8 0 (.5 04 )
,
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
„
…
†
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
Uses IRF830A data and test conditions
as C
Data and specifications subject to change without notice.
oss
oss
eff. is a fixed capacitance that gives the same charging time
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
while V
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
1 .7 5 (.0 69 )
1 .2 5 (.0 49 )
1 .60 (.06 3)
1 .50 (.05 9)
DS
is rising from 0 to 80% V
27 .4 0 (1.07 9)
23 .9 0 (.9 41 )
2 6 .4 0 (1 .03 9)
2 4 .4 0 (.9 61 )
1 5 .42 (.6 09 )
1 5 .22 (.6 01 )
4
3
30.4 0 (1.1 97 )
0.3 6 8 (.0 1 4 5 )
0.3 4 2 (.0 1 3 5 )
6 0.00 (2 .36 2)
M A X .
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 36 )
4 .5 2 (.1 78 )
4
TAC Fax: [phone]
M IN .
DSS
www.vishay.com
04/04
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