IRF830ALPBF Vishay, IRF830ALPBF Datasheet - Page 2

• Manufacturer Part Number: IRF830ALPBF
• Description: MOSFET N-CH 500V 5A TO262-3
• Manufacturer: Vishay

Specifications of IRF830ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ALPBF

Document Number: 91062
Diode Characteristics
IRF830AS/LPbF
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θJA
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
2.8
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.60
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
620
886
–––
–––
–––
430
4.3
2.0
10
21
21
15
93
27
39
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
650
1.4
4.5
6.3
1.5
3.0
25
24
11
5.0
20
µA
nA
nC
ns
pF
µC
ns
V
Ω
V
S
A
V
Typ.
–––
–––
–––
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „†
V/°C
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
J
J
= 5.0A
= 5.0A
= 25°C, I
= 25°C, I
= 14Ω
= 49Ω,See Fig. 10
= V
= 500V, V
= 400V, V
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 50V, I
= 10V, See Fig. 6 and 13 „†
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
Reference to 25°C, I
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 5.0A, V
= 5.0A
= 250µA
= 3.0A
= 3.0A†
GS
GS
= 0V to 400V …†
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
230
5.0
7.4
1.7
40
= 0V, T
= 0V
www.vishay.com
GS
„
„†
J
G
= 0V „
= 125°C
D
= 1mA†
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)
2