IRFU214 Vishay, IRFU214 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
IRFU214
Manufacturer Part Number
IRFU214
Description
MOSFET N-CH 250V 2.2A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFR214PBF.pdf
(8 pages)
Specifications of IRFU214
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFU214
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU214B(HJ)
Manufacturer:
华晶
Quantity:
20 000
Part Number:
IRFU214PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 10 V
= 10 V
MIN.
= 200 V, V
= 24 Ω, R
= 25 °C, I
-
-
-
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TEST CONDITIONS
DD
DS
DS
GS
DS
= 125 V, I
F
= 250 V, V
= V
= 0 V, I
V
= 50 V, I
= 2.7 A, dI/dt = 100 A/μs
V
V
GS
DS
S
D
GS
GS
I
GS
D
= 2.2 A, V
= 45 Ω, see fig. 10
= ± 20 V
= 25 V,
, I
= 2.7 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
D
= 250 μA
I
GS
D
= 1.3 A
= 2.7 A,
= 1.3 A
D
TYP.
= 0 V
GS
J
= 1 mA
-
-
-
DS
= 125 °C
G
G
= 0 V
= 200 V,
b
b
D
S
b
b
D
S
b
MIN.
0.80
250
2.0
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
5.0
50
S10-1122-Rev. C, 10-May-10
Document Number: 91269
TYP.
0.39
0.65
140
190
9.6
7.0
7.6
7.0
4.5
7.5
42
16
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
250
390
4.0
2.0
8.2
1.8
4.5
2.2
8.8
2.0
1.3
S
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V