IRFU214 Vishay, IRFU214 Datasheet - Page 7
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IRFU214
Manufacturer Part Number
IRFU214
Description
MOSFET N-CH 250V 2.2A I-PAK
Manufacturer
Vishay
Datasheet
1.IRFR214PBF.pdf
(8 pages)
Specifications of IRFU214
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFU214
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU214B(HJ)
Manufacturer:
华晶
Quantity:
20 000
Part Number:
IRFU214PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91269.
Document Number: 91269
S10-1122-Rev. C, 10-May-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
IRFR214, IRFU214, SiHFR214, SiHFU214
Body diode forward
-
+
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
current
SD
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7