FDP18N20F Fairchild Semiconductor, FDP18N20F Datasheet - Page 2

• Manufacturer Part Number: FDP18N20F
• Description: MOSFET N-CH 200V 18A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP18N20F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 145 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP18N20F / FDPF18N20FT Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
FDPF18N20FT
∆T
≤ 18A, di/dt ≤ 200A/µs, V
DSS
FDP18N20F
J
AS
= 18A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF18N20FT
G
FDP18N20F
= 25Ω, Starting T
DSS
Device
, Starting T
Parameter
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
f = 1MHz
V
V
V
R
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
GS
G
F
DS
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 200V, V
= 160V, T
= 0V, I
= ±30V, V
= 25V, V
= 160V, I
= 100V, I
= 0V, I
= V
= 10V, I
= 10V
= 20V, I
DS
T
Test Conditions
, I
C
2
SD
SD
Reel Size
D
= 25
D
D
GS
D
GS
D
= 18A
= 18A
C
= 9A
GS
DS
= 250µA
= 9A
= 18A
= 18A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
200
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.12
13.6
240
885
200
0.2
80
24
20
16
50
50
40
5
9
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1180
0.14
100
270
110
110
1.5
5.0
40
90
10
35
26
18
72
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
pF
pF
pF
µA
nA
ns
ns
ns
ns
ns
nC
Ω
V
V
S
A
A
V
o
C