FDP18N20F Fairchild Semiconductor, FDP18N20F Datasheet - Page 5

• Manufacturer Part Number: FDP18N20F
• Description: MOSFET N-CH 200V 18A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP18N20F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 145 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP18N20F / FDPF18N20FT Rev. A
Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT
0.01
0.1
1
2
10
Single pulse
0.05
0.02
0.01
0.2
0.1
-5
0.5
10
-4
10
Rectangular Pulse Duration [sec]
-3
10
-2
5
10
-1
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
10
θ
JM
0
JC
- T
(t) = 3.0
t
C
1
t
= P
2
10
o
DM
C/W Max.
1
* Z
1
θ
/t
JC
2
(t)
10
2
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