IRF710 Vishay, IRF710 Datasheet
IRF710
Specifications of IRF710
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IRF710 Summary of contents
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... IRF710PbF SiHF710-E3 IRF710 SiHF710 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 2.0 A (see fig. 12 ≤ 150 °C. J IRF710, SiHF710 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 400 DS V ± 2 1.2 I 6.0 DM 0.29 E 120 AS I 2.0 ...
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... IRF710, SiHF710 Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V Drain-to-Source Voltage ( 91041_02 Fig Typical Output Characteristics, T Document Number: 91041 For technical questions, contact: hvmos.techsupport@vishay.com S09-0070-Rev. A, 02-Feb-09 4 °C C 91041_03 = 25 ° 150 °C C 91041_04 = 150 °C C IRF710, SiHF710 Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF710, SiHF710 Vishay Siliconix 400 MHz iss rss 300 oss ds C iss 200 C oss 100 C rss Drain-to-Source Voltage ( 91041_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 200 Total Gate Charge (nC) 91041_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com For technical questions, contact: hvmos.techsupport@vishay.com ...
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... For technical questions, contact: hvmos.techsupport@vishay.com S09-0070-Rev. A, 02-Feb-09 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRF710, SiHF710 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off) ...
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... IRF710, SiHF710 Vishay Siliconix 91041_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com For technical questions, contact: hvmos.techsupport@vishay.com 6 300 Top 250 Bottom 200 150 100 100 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 0.89 A 1.3 A 2.0 A ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF710, SiHF710 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...