IRF710 Vishay, IRF710 Datasheet - Page 2

• Manufacturer Part Number: IRF710
• Description: MOSFET N-CH 400V 2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF710

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.9 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF710

IRF710, SiHF710
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
I
I
C
V
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
thCS
g
L
L
t
thJA
thJC
DS
I
SM
t
t
t
on
DS
oss
SD
iss
rss
S
rr
fs
gs
gd
r
f
D
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
Reference to 25 °C, I
J
= 10 V
= 10 V
= 25 °C, I
= 320V, V
TYP.
V
0.50
V
V
V
V
f = 1.0 MHz, see fig. 5
T
TEST CONDITIONS
R
DD
DS
DS
-
-
GS
DS
J
G
dI/dt = 100 A/µs
= 25 °C, I
= 200 V, I
= 400 V, V
= V
= 24 Ω, R
= 50 V, I
= 0 V, I
V
V
see fig. 10
V
GS
S
DS
GS
GS
I
GS
D
= 2.0 A, V
= ± 20 V
= 25 V,
, I
= 2.0 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
F
= 250 µA
D
= 250 µA
D
I
= 2.0 A,
= 1.2 A
GS
D
= 95 Ω
= 2.0 A,
b
= 1.2 A
D
= 0 V
= 1 mA
GS
b
J
G
G
DS
= 125 °C
= 0 V
b
= 320 V
b
MAX.
D
S
3.5
S
62
D
b
b
-
MIN.
400
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0070-Rev. A, 02-Feb-09
Document Number: 91041
TYP.
0.47
0.85
170
240
6.3
8.0
9.9
4.5
7.5
34
21
11
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
250
540
S
4.0
3.6
3.4
8.5
2.0
6.0
1.6
1.6
25
17
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
µC
nA
µA
pF
ns
ns
Ω
V
V
S
A
V