IRF840SPBF Vishay, IRF840SPBF Datasheet - Page 5

MOSFET N-CH 500V 8A D2PAK

IRF840SPBF

Manufacturer Part Number
IRF840SPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF840SPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840SPBF
Quantity:
70 000
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
91071_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
91071_11
25
10
10
0.1
10
-3
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
-4
100
Single Pulse
(Thermal Response)
125
10
-3
t
1
150
, Rectangular Pulse Duration (S)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
1
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF840S, SiHF840S
DS
t
r
j
= P
P
10
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
t
1
d(off)
1
thJC
/t
2
t
+ T
2
t
f
10
C
+
-
www.vishay.com
2
V
DD
5

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