IRF840 Vishay, IRF840 Datasheet

MOSFET N-CH 500V 8A TO-220AB

IRF840

Manufacturer Part Number
IRF840
Description
MOSFET N-CH 500V 8A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of IRF840

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±20V
Drain Current (max)
8A
Power Dissipation
125W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF840
IRF840IR

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91065
S-81275-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.0 A, dI/dt ≤ 100 A/µs, V
= 50 V, starting T
(Ω)
TO-220
a
G
J
D
= 25 °C, L = 16 mH, R
S
c
a
a
b
V
DD
GS
≤ V
= 10 V
G
DS
N-Channel MOSFET
, T
J
Single
500
≤ 150 °C.
9.0
38
18
G
= 25 Ω, I
D
S
C
Power MOSFET
0.85
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 8.0 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF840APbF
SiHF840A-E3
IRF840A
SiHF840A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
IRF840A, SiHF840A
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
500
510
125
8.0
5.1
1.0
8.0
5.0
1.1
32
13
10
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
mJ
mJ
COMPLIANT
°C
W
V
A
A
Available
1

IRF840 Summary of contents

Page 1

... IRF840APbF SiHF840A-E3 IRF840A SiHF840A = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 8.0 A (see fig. 12 ≤ 150 ° IRF840A, SiHF840A Vishay Siliconix Results in Simple Drive g Specified oss SYMBOL LIMIT V 500 DS V ± 8 5 1.0 E 510 AS I 8.0 ...

Page 2

... IRF840A, SiHF840A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... V , Drain-to-Source Voltage (V) 91065_02 DS Fig Typical Output Characteristics, T Document Number: 91065 S-81275-Rev. A, 16-Jun-08 4 ° 91065_03 = 25 ° 150 ° 91065_04 = 150 °C C IRF840A, SiHF840A Vishay Siliconix ° 150 C J ° µs Pulse Width 0.1 4.0 5.0 6.0 7.0 8.0 V Gate-to-Source Voltage ( Fig ...

Page 4

... IRF840A, SiHF840A Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91065_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91065_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91065_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91065 S-81275-Rev. A, 16-Jun-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF840A, SiHF840A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF840A, SiHF840A Vishay Siliconix 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91065_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Top 3.6 A 5.1 A Bottom 8.0 A 125 150 91065_12d 600 580 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF840A, SiHF840A Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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