SI7336ADP-T1-E3 Vishay, SI7336ADP-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI7336ADP-T1-E3
• Description: MOSFET N-CH 30V 30A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7336ADP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 15V
• Power - Max: 5.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 5400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 5.4W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7336ADP-T1-E3TR

Si7336ADP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
60
50
40
30
20
10
0
0
V
GS
a
2
a
= 10 thru 4 V
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
4
a
Symbol
R
V
6
J
I
t
t
I
I
C
DS(on)
V
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
= 25 °C, unless otherwise noted
SD
oss
t
t
rss
iss
rr
fs
gs
gd
r
f
g
g
3 V
8
V
I
V
V
D
DS
DS
DS
≅ 1.0 A, V
I
F
= 15 V, V
= 30 V, V
V
V
= 15 V, V
10
V
V
V
V
= 2.9 A, di/dt = 100 A/µs
DS
V
V
I
DS
S
DD
DS
DS
GS
GS
DS
Test Conditions
= 2.9 A, V
= 0 V, V
= V
= 30 V, V
≥ 5 V, V
= 4.5 V, I
= 15 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 10 V, R
GS
= 0 V, f = 1 MHz
D
GS
GS
D
D
GS
D
= 250 µA
L
= ± 20 V
= 25 A
= 25 A
= 10 V
= 19 A
= 15 Ω
= 0 V
= 0 V
J
D
= 55 °C
G
= 20 A
= 6 Ω
60
50
40
30
20
10
0
0.0
0.5
Min.
1.0
0.6
V
30
1.0
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
1.5
0.0024
0.0031
5600
T
Typ.
0.72
110
860
415
1.3
36
18
10
24
16
90
32
45
C
2.0
= 125 °C
S-80440-Rev. F, 03-Mar-08
25 °C
Document Number: 73152
2.5
0.0030
0.0040
± 100
Max.
140
3.0
1.1
2.0
50
35
25
50
70
1
5
3.0
- 55 °C
3.5
Unit
nA
µA
nC
pF
ns
Ω
Ω
V
A
S
V
4.0