SI7336ADP-T1-E3 Vishay, SI7336ADP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7336ADP-T1-E3
• Description: MOSFET N-CH 30V 30A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7336ADP-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5600pF @ 15V
• Power - Max: 5.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 5400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 30A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 4mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 5.4W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7336ADP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73152
S-80440-Rev. F, 03-Mar-08
0.005
0.004
0.003
0.002
0.001
0.000
0.1
50
10
1
6
5
4
3
2
1
0
0.00
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
5
= 20 A
0.2
= 15 V
On-Resistance vs. Drain Current
T
10
J
V
10
= 150 °C
SD
Q
- Source-to-Drain Voltage (V)
g
0.4
V
I
15
- Total Gate Charge (nC)
D
GS
- Drain Current (A)
Gate Charge
20
= 4.5 V
20
0.6
25
30
0.8
30
T
V
J
GS
= 25 °C
35
40
= 10 V
1.0
40
1.2
50
45
0.015
0.012
0.009
0.006
0.003
0.000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 25 A
= 10 V
6
2
V
V
T
GS
DS
0
J
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
25
Capacitance
12
4
I
D
= 25 A
C
50
Vishay Siliconix
iss
Si7336ADP
18
6
75
www.vishay.com
100
24
8
125
150
30
10
3