IRF840ALPBF Vishay, IRF840ALPBF Datasheet - Page 6

• Manufacturer Part Number: IRF840ALPBF
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840ALPBF

IRF840AS/LPbF
Document Number: 91066
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
10 V
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2µF
GS
t p
t p
50KΩ
3mA
Current Sampling Resistors
I A S
.3µF
D .U .T
0 .0 1 Ω
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
1200
1000
800
600
400
200
0
Fig 12d. Typical Drain-to-Source Voltage
25
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
Vs. Avalanche Current
Vs. Drain Current
J
75
100

TOP
BOTTOM
www.vishay.com
125
°
I D
3.6A
5.1A
8.0A
150
6