IRFU9310PBF Vishay, IRFU9310PBF Datasheet - Page 2
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IRFU9310PBF
Manufacturer Part Number
IRFU9310PBF
Description
MOSFET P-CH 400V 1.8A I-PAK
Manufacturer
Vishay
Specifications of IRFU9310PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-400V
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9310PBF
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. This is applied for IPAK, L
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2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
S
J
of DPAK is measured between lead and center of die contact.
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
V
V
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
GS
GS
V
R
= 25 °C, I
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
g
J
Reference to 25 °C, I
= - 10 V
= - 10 V
= 21 Ω, R
= 25 °C, I
= - 320 V, V
MIN.
V
V
V
V
-
-
-
V
DD
DS
f = 1.0 MHz, see fig. 5
DS
DS
GS
TEST CONDITIONS
= - 200 V, I
c
= - 50 V, I
F
= V
= - 400 V, V
= 0 V, I
V
V
= -1.1 A, dI/dt = 100 A/μs
V
GS
DS
I
S
D
GS
D
GS
= - 1.1 A, V
= 180 Ω, see fig. 10
= - 1.1 A, V
GS
, I
= - 25 V,
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 μA
= - 250 μA
D
I
D
D
= - 1.1 A
GS
= - 1.1 A,
= - 1.1 A
D
TYP.
= - 1 mA
= 0 V
GS
-
-
-
J
DS
G
G
= 125 °C
= 0 V
= - 320 V,
b
D
S
b
b
D
S
b
b
- 400
MIN.
- 2.0
0.91
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
2.5
50
S10-1139-Rev. C, 17-May-10
Document Number: 91284
- 0.41
TYP.
270
170
640
8.0
4.5
7.5
50
11
10
25
24
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
- 1.9
- 7.6
- 4.0
260
960
7.0
3.2
5.0
S
13
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
nC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V