IRFU9310PBF Vishay, IRFU9310PBF Datasheet - Page 6

• Manufacturer Part Number: IRFU9310PBF
• Description: MOSFET P-CH 400V 1.8A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9310PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1.8A
• Drain Source Voltage Vds: -400V
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFU9310PBF

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
www.vishay.com
6
Fig. 12a - Unclamped Inductive Test Circuit
- 10 V
Fig. 13a - Basic Gate Charge Waveform
R
V
- 20 V
g
G
V
DS
Q
t
p
GS
I
AS
D.U.T.
0.01 Ω
L
Charge
Q
Q
GD
G
Driver
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
300
250
200
150
100
50
0
25
15 V
+
-
Starting T , Junction Temperature ( C)
V
A
DD
50
J
75
100
TOP
BOTTOM
Fig. 12b - Unclamped Inductive Waveforms
125
I
AS
12 V
Fig. 13b - Gate Charge Test Circuit
V
-0.49A
GS
Same type as D.U.T.
-0.7A
-1.1A
°
I D
Current regulator
0.2 µF
150
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-1139-Rev. C, 17-May-10
Document Number: 91284
D.U.T.
V
I
D
DS
+
-
V
DS