IRL530 Vishay, IRL530 Datasheet - Page 2

• Manufacturer Part Number: IRL530
• Description: MOSFET N-CH 100V 15A TO-220AB
• Manufacturer: Vishay

Specifications of IRL530

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 9A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 15 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 48 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530

IRL530, SiHL530
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
thCS
DS
L
L
t
thJA
thJC
SM
I
t
t
t
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
V
R
GS
GS
GS
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
g
Reference to 25 °C, I
J
= 5.0 V
= 4.0 V
= 5.0 V
= 12 Ω, R
= 25 °C, I
= 80 V, V
V
V
V
V
TYP.
f = 1.0 MHz, see fig. 5
V
0.50
TEST CONDITIONS
DS
DS
DS
GS
DD
-
-
= 100 V, V
F
= V
= 50 V, I
= 0 V, I
= 50 V, I
V
= 15 A, dI/dt = 100 A/μs
V
V
DS
D
GS
S
GS
GS
GS
= 32 Ω, see fig. 10
= 15 A, V
, I
= 25 V,
= ± 10
I
= 0 V, T
= 0 V,
D
D
D
see fig. 6 and 13
D
= 15 A, V
D
= 250 μA
= 250 μA
= 9.0 A
GS
= 15 A,
I
I
D
D
D
= 0 V
= 9.0 A
= 7.5 A
J
GS
= 1 mA
= 150 °C
G
G
= 0 V
DS
b
= 80 V,
b
b
b
D
S
MAX.
b
D
S
1.7
62
b
-
b
MIN.
100
1.0
6.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0518-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91299
TYP.
0.14
0.93
930
250
100
150
4.7
4.5
7.5
57
22
48
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.16
0.22
250
200
2.0
3.8
2.5
1.4
S
25
28
14
15
60
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V