IRL530 Vishay, IRL530 Datasheet - Page 5

• Manufacturer Part Number: IRL530
• Description: MOSFET N-CH 100V 15A TO-220AB
• Manufacturer: Vishay

Specifications of IRL530

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 9A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 5V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 15 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 48 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 100 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL530

Document Number: 91299
S11-0518-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
This datasheet is subject to change without notice.
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
5 V
V
GS
t
d(on)
V
DS
t
r
IRL530, SiHL530
D.U.T.
www.vishay.com/doc?91000
R
Vishay Siliconix
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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