IRF740STRLPBF Vishay, IRF740STRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF740STRLPBF
• Description: MOSFET N-CH 400V 10A D2PAK
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF740STRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 400V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF740S, SiHF740S
Vishay Siliconix
www.vishay.com
4
91055_05
91055_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2500
2000
1500
1000
500
20
16
12
0
8
4
0
10
0
0
I
D
= 10 A
V
DS ,
15
Q
V
Drain-to-Source Voltage (V)
G
DS
, Total Gate Charge (nC)
= 80 V
V
DS
30
V
C
C
C
GS
= 200 V
iss
rss
oss
= C
= 0 V, f = 1 MHz
= C
= C
V
DS
10
gs
gd
ds
45
= 320 V
C
C
1
+ C
C
+ C
iss
oss
rss
gd
gd
For test circuit
see figure 13
, C
ds
60
Shorted
75
91055_07
91055_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-1
1
0
3
5
2
2
5
2
5
2
5
2
1
0.50
0.1
Fig. 8 - Maximum Safe Operating Area
2
V
V
DS
0.70
SD
5
Operation in this area limited
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
1
150
2
°
0.90
C
by R
5
25
10
DS(on)
°
C
1.10
2
S-83029-Rev. A, 19-Jan-09
Document Number: 91055
T
T
Single Pulse
C
J
5
= 150 °C
= 25 °C
10
1.30
2
V
GS
2
= 0 V
10
100
1
10
5
ms
1.50
µs
10
ms
µs
3