IRF740STRLPBF Vishay, IRF740STRLPBF Datasheet
IRF740STRLPBF
Specifications of IRF740STRLPBF
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IRF740STRLPBF Summary of contents
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... The PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF740STRL-GE3 IRF740STRLPbF SiHF740STL- °C, unless otherwise noted) C SYMBOL ° 100 °C ...
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... IRF740S, SiHF740S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 = 150 °C 0 91055_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This document is subject to change without notice. IRF740S, SiHF740S Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF740S, SiHF740S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 C iss 1000 C oss 500 C rss Drain-to-Source Voltage ( 91055_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 320 200 Total Gate Charge (nC) 91055_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 This document is subject to change without notice. IRF740S, SiHF740S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF740S, SiHF740S Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit 91055_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91055. ...
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... E 0.020 0.039 E1 0.020 0.035 0.045 0.070 H 0.045 0.068 0.015 0.029 L1 0.015 0.023 L2 0.045 0.065 L3 0.330 0.380 L4 Package Information Vishay Siliconix H Gauge plane 0° to 8° B Seating plane Detail “A” Rotated 90° CW scale 8 View MILLIMETERS MIN. MAX. MIN. 6.86 - ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...