FQPF10N50CF Fairchild Semiconductor, FQPF10N50CF Datasheet - Page 3

• Manufacturer Part Number: FQPF10N50CF
• Description: MOSFET N-CH 500V 10A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF10N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 610 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2096pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.61 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 80 ns
• Rise Time: 80 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N50CF / FQPF10N50CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
4000
3000
2000
1000
Drain Current and Gate Voltage
0
10
1.5
1.0
0.5
10
10
10
-1
-1
1
0
10
-1
Top :
Bottom : 4.5 V
0
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
C
C
C
oss
iss
rss
V
DS
V
DS
, Drain-Source Voltage [V]
10
, Drain-Source Voltage [V]
10
10
I
D
0
, Drain Current [A]
0
15
20
V
GS
※
C
C
C
= 10V
1. 250µs Pulse Test
2. T
Notes :
iss
oss
rss
C
= C
= C
25
= C
= 25 ℃
10
1
gs
gd
ds
+ C
※
+ C
10
Note : T
* Note :
1
gd
gd
1. V
2. f = 1 MHz
30
(C
V
GS
ds
J
GS
= 25 ℃
= shorted)
= 20V
= 0 V
35
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
-1
1
0
10
0.2
10
10
-1
12
10
1
0
8
6
4
2
0
2
0
25
o
C
Variation vs. Source Current
and Temperatue
150
0.4
o
C
150 ℃
10
4
V
V
SD
GS
0.6
Q
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
G
V
, Total Gate Charge [nC]
25 ℃
DS
= 400V
V
20
-55
DS
o
V
= 250V
C
DS
6
0.8
= 100V
30
※
1.0
1. V
2. 250µs Pulse Test
Notes :
DS
※
8
= 40V
1. V
2. 250µs Pulse Test
Notes :
* Note : I
GS
= 0V
40
1.2
D
= 10A
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10
50
1.4