FQPF10N50CF Fairchild Semiconductor, FQPF10N50CF Datasheet - Page 6

• Manufacturer Part Number: FQPF10N50CF
• Description: MOSFET N-CH 500V 10A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF10N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 610 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2096pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.61 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 80 ns
• Rise Time: 80 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FQP10N50CF / FQPF10N50CF Rev. A