IRF9520 Vishay, IRF9520 Datasheet - Page 3
![MOSFET P-CH 100V 6.8A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9520
Manufacturer Part Number
IRF9520
Description
MOSFET P-CH 100V 6.8A TO-220AB
Manufacturer
Vishay
Specifications of IRF9520
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9520
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9520
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
IR
Quantity:
62 993
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Quantity:
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Company:
Part Number:
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Manufacturer:
IR
Quantity:
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Part Number:
IRF9520NS
Manufacturer:
IR
Quantity:
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Part Number:
IRF9520PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91074
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91074_01
91074_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
0
Top
Bottom
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS ,
DS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
Top
Bottom
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 10 V
- 15 V
V
GS
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
This datasheet is subject to change without notice.
25 °C
175 °C
C
C
= 175 °C
- 4.5 V
- 4.5 V
= 25 °C
91074_04
91074_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60- 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 6.8 A
= - 10 V
- V
5
T
GS ,
J ,
IRF9520, SiHF9520
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
6
175
25
°
C
7
www.vishay.com/doc?91000
°
Vishay Siliconix
C
20 µs Pulse Width
V
8
DS
= -
www.vishay.com
50 V
9
10
3